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Fujitsu Microelectronics Europe Introduces 128Mbit Mobile FCRAMTM with Burst Mode Operation
Fujitsu Microelectronics Europe (FME) today announced the availability of a new 128Mbit Mobile Fast Cycle RAMTM (*1) device for mobile phone applications.
Frankfurt, GERMANY (PRWEB) August 28, 2003 -- Fujitsu Microelectronics Europe (FME) today announced the availability of a new 128Mbit Mobile Fast Cycle RAMTM (*1) device for mobile phone applications. The new Mobile FCRAM, the MB82DBR08163, adopts burst mode operations compliant with the Common Specifications for Mobile RAM (COSMORAM*2). The devices high-speed performance and large density make it ideal for 3G cellular phone vendors looking to provide advanced applications. The device will start shipping in September 2003.
The 128Mbit memory density meets the increased storage needs of next generation cellular phone applications. In addition, burst mode operation provides a clock access time of 12 nanoseconds (@ 66 MHz), enabling continuous read or write operations. By combining high access speed and high density, the new device is well suited to deliver advanced applications to 3G networks that support multimedia functions such as video data streaming.
The MB82DBR08163 comes in a 71-pin FBGA package, and is also available in either chip or wafer form to accommodate special mounting requirements.
Fujitsu plans to extend its Mobile FCRAM line of 1.8V single power source products and increase burst frequencies to 80MHz and 100MHz.
Product Features
1. Large memory density
- The 128Mbit density meets increased storage needs of todays cellular phones.
2. High-speed access
- Burst mode enables fast continuous read/write operations through synchronisation of system clock.
- 12ns clock access time in burst mode (@ 66MHz).
- Can read in page mode, asynchronous to the external clock. Maximum page access time is 20ns.
3. Low-power consumption
- Maximum of 200 ľA of standby current.
- User configurable power-down modes (sleep mode, partial power-down mode) dramatically cut standby current.
Main Specifications
Memory density 128Mbit
I/O configuration x16
Supply voltage 2.7--3.1V
I/O supply voltage 1.65--1.95V
Burst frequency (read latency: 5) 66MHz
Random-access time (max) 70ns
Clock access time (max) 12ns
Page access time (max) 20ns
Active current (max) 35 mA
Standby current (max) 200 ľA
Powerdown current (max) 10 ľA
Packaging 71-pin FBGA
Glossary
1. FCRAM
Fujitsus unique core technology with features of high-speed and low power consumption.
Mobile FCRAM is pseudo static RAM, with an SRAM interface on a FCRAM core.
2. Common Specifications for Mobile RAM (COSMORAM)
Common specifications for next generation mobile pseudo SRAM user interface announced by Fujitsu, NEC Electronics, and Toshiba on February 17, 2003.
Trademark notice
FCRAM is a trademark of Fujitsu Ltd. All other company/product names mentioned herein are trademarks or registered trademarks of their respective companies.
About Fujitsu Microelectronics Europe
Fujitsu Microelectronics Europe is a major supplier of semiconductor products to the European and global market. The company's main business focus is on providing systems solutions to the automotive, multimedia, networking/telecommunications and mobile communications markets.
Fujitsu offers a broad range of semiconductor devices, including telecommunications ICs, RF devices, MPEG encoders and decoders, microcontrollers, graphic display controllers and microprocessors, FCRAMs and Flash memory. The company is also a leader in colour plasma display panels. For more information visit Fujitsu Microelectronics Europe's website at http://www.fme.fujitsu.com
FCRAM is a trademark of Fujitsu Limited in Japan.
ISSUED ON BEHALF OF:
Fujitsu Microelectronics Europe
Am Siebenstein 6-10
D-63303 Dreieich-Buchschlag
Germany
Tel: +49-6103-690-0
Fax: +49-6103-690122
E-mail: jim.bryant@fme.fujitsu.com
Contact: Jim Bryant
MORE INFORMATION FROM:
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