Austin, TX (PRWEB) November 16, 2004
Today at the SEMI NanoFourm in Austin Texas Patrick OÂConnor, CEO of Nanometrix announced that the firm's research team has been successful in producing films of photo resist on silicon wafers ≤ 25nm in thickness.
Dr. Picard V-P R&D leading a team that includes Juan Schneider V-P Technologies & Mame Fatou-Seye have produced 8 inch diameter wafers coated with a 25nm layer of PMMA with a surface roughness of 1nm.
As semiconductor firms strive to keep up with MooreÂs Law a major technological ÂBrick WallÂ has been the line width limitations caused by the Âheight to width ratioÂ due to thick photo resist layers currently used in the photolithography process. Currently, typical photo resist layers are in the 120 Â 150nm range. Because of the thickness, scattering and edge effects are present preventing feature size reduction in semiconductor devices. Current lithographic technologies are seeking for new and innovative ways to reduce feature size, because size matters.
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