Especially attractive for applications with limited board space and 14 address line limitations (A0-A13)
(PRWEB) October 27, 2011
Memphis is pleased to announce the release of its newest high density DDR2 component, the Dual Die 2Gbit IC. The MEMPHIS 2Gb DDR2 Dual Die Package (DDP) will be available in a x8 configuration and a FBGA 63 package. The latest MEMPHIS IC will be especially attractive for applications with limited board space and 14 address line limitations (A0-A13). MEMPHIS will also use the chip in its VLP Mini-DIMM and SO-RDIMM products for very compact networking and industrial PC applications.
Technically the Memphis 2Gbit Dual-Die Package (DDP) can be addressed like two separate 1Gbit DDR2 DRAMs, while using the space of only one chip on the board. Compared to a regular monolithic DDR2 IC in FBGA 60 package, the Dual-Die products have 3 additional BGA-connections used for the control-signals Chip-Select, ODT and Clock-Enable of the second Die inside.
Concurrently, MEMPHIS is preparing its 4Gbit Dual-Die DDR2 chip, which is expected to also be released in Q4 of 2011. Using the same FBGA 63 package as the 2Gb Dual Die IC, the MEMPHIS 4Gb DDR2 IC will utilize two 2Gb dies in a single package.
With the release of both the 2Gb and 4Gb DDR2 Dual Die, the DDR2 product line from MEMPHIS can fulfill all high density demands of the industrial and embedded computing market, from 2Gbit DDR2 monolithic DRAM (x4, x8, x16), to 2Gbit or 4Gbit DDR2 Dual-Die (x8).
MEMPHIS high density DDR2 products are available in industrial temperature specs as well.
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