Our new Ultra LNA chip together with our successful line of power pHEMT chips, positions BeRex, Inc. as the "one-stop solution" for RF and microwave amplifier designers and manufacturers.
San Jose, CA (PRWEB) March 18, 2012
BeRex a leading supplier of high performance GaAs pHEMT (pseudomorphic high electron mobility transistor) chips, today extends its offering with the BCL016B an Ultra-low noise pHEMT chip with a remarkably low Noise Figure of 0.4 dB with a high Associated Gain of 13.5 dB typical at 12 GHz and a robust Power In (Pin) of up to 20dBm. Featuring a recessed gate with a nominal length of 0.15µm and width of 160µm the BCL016B, like the all other BeRex pHEMT products, is produced using state of the art metallization with Si3N4 passivation and is carefully screened to assure high reliability.
The BCL016B LNA is available in bare-die and provides low noise and high insertion gain over a broad band, up to 40 GHz, making it ideal for commercial or military low noise RF and microwave amplifiers .
“BeRex, Inc. is committed to being a total solutions provider by providing a “one- stop solution” for high performance and reliability power and LNA pHEMT devices. With the BCL016B LNA we have the perfect complement to our other pHEMT products allowing BeRex to offer our clients a full line of high quality pHEMT products” commented Dr. Alex Yoo, Vice President of Research and Development.
The BeRex BCL016B chip is competitively priced and is in production with samples available upon request. Additional information about these and other BeRex products is available on the company website: http://www.berex.com.
BeRex, Inc., founded in 2007 and headquartered in San Jose, CA, designs, manufactures, and markets a broad range of RF GaAs MIMIC devices and pHEMT discrete transistor products.