San Jose, CA (PRWEB) July 29, 2012
BeRex, Inc. today announces the expansion of its high performance BCP-series of GaAs pHEMT (pseudomorphic high electron mobility transistor) FET chips, with availability of the BCP040T, BCP060T2 and BCP080T2. These chips, available in bare-die, feature a nominal gate length of .25µm and gate widths of 400, 600, and 800µm respectively and support operating frequencies of up to 27 GHz. They are designed to provide excellent low noise, high gain, and high PAE (power added efficiency) performance making them ideal for low noise amplifiers and wireless communications designs for commercial and military applications up to 27 GHz.
The new chips, like the previously announced BeRex, Inc. BCP-series chips, are produced in the U.S. using state of the art metallization and SI3N4 passivation to assure the highest reliability. The addition of these new products brings BeRex’s pHEMT FET product offering to eleven, providing the broadest selection of FETs with up to 2.5 Watts of output power.
“We have listened to our clients and responded with these new pHEMT chips to meet their most critical requirements. BeRex, Inc. is committed to be a one-stop supplier for to our client’s RF and microwave FET needs,” commented Dr. Alex Yoo, Vice President of Research and Development.
The BeRex BCP-series chips are competitively priced and are available immediately. Additional information about these and other BeRex products is available on the company website: http://www.berex.com.
BeRex, Inc., founded in 2008 is headquartered in San Jose, CA. where it designs, manufactures, and sells a broad range of RF and microwave GaAs HBT and PHEMT devices to a worldwide client base.
David Snook, Marketing & Sales
1735 North 1st Street #302
San Jose, CA 95112