Altis Semiconductor Introduces the Next Generation of Embedded CBRAM Technology

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New embedded non-volatile memory offers low power and fast access time

eCBRAM will bring a significant technical breakthrough for ultra low power applications, Pascal Louis, CTO of Altis.

Altis announced today the next generation of embedded CBRAM (eCBRAM) technology, a new platform available for demonstration in Q2 2013. The new technology features design and manufacturing improvements which deliver higher reliability and faster write speeds. eCBRAM technology was developed through Altis’ partnership with Adesto Technologies and will enhance the Altis eNVM (embedded non-volatile memory) foundry service portfolio, today based on 130nm CMOS technologies.

eCBRAM is an innovative embedded memory, combining EEPROM flexibility with embedded Flash density. Altis’ 130nm eCBRAM technology is 100% compatible with the Altis 130nm Low Power Platform. To improve cost efficiency for prospective new customer designs, Altis offers customers the shared cost benefits of its “multi-product wafer” program (MPW). The MPW program for new eCBRAM designs is now open to customers.

eCBRAM technology is well-suited for consumer, wireless, contactless and smart secure applications that require ultra-low power and fast access time..

“We are very pleased to offer this next generation eCBRAM to the market” said Pascal Louis, CTO of Altis.” Since our design kit release in June 2012, we have supported several customers’ projects with embedded CBRAM. Based on our long-term partnership with Adesto and Altis experience on innovative technology developments, this new generation of eCBRAM is providing major enhancements to address our customer’s needs. Our eCBRAM offering will bring a significant technical breakthrough for ultra low power applications “    

“Our partnership with Altis has helped us to make steady progress in the development of CBRAM® technology,” said Narbeh Derhacobian, CEO of Adesto Technologies. “Second generation CBRAM has passed a critical milestone for any new non-volatile memory technology. This release, not only demonstrates the low power and high performance features of CBRAM technology but also paves the way for full compatibility with standard manufacturing back end of line flows, including robust data retention through the solder reflow process.”

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