Navitas GaN Power ICs Drive Revolutionary Performance at Inaugural Power Electronics Conference 2017

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Device integration drives performance, enabling a new class of high-frequency, high-efficiency and high-density power systems

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Navitas Semiconductor announced today that Stephen Oliver, vice president of Sales and Marketing, will deliver a keynote presentation titled, “GaN Power ICs: Integration Drives Performance” at the first annual Power Electronics Conference 2017 to be held Dec 5th in Munich, Germany. The keynote will share new insights on how the industry’s first and only GaN power ICs create dramatic changes in speed, efficiency and densities for a broad range of power systems. The one-day conference presents an interactive forum for wide bandgap manufacturers, partners, and customers to share expertise in accelerating adoption of new GaN and SiC devices.

“After 40 years utilizing slow and inefficient silicon devices with little change to circuit architectures, the power electronics industry is entering an exciting new era of new materials, new devices, new magnetics, new controllers and imaginative topologies”, said Oliver. “As the world’s first and only GaN power IC provider, Navitas looks forward to sharing proof points demonstrating how monolithic integration of power circuits - all in GaN - when combined with new resonant topologies leads to a dramatic increase in frequency and efficiency and a new generation of high-efficiency, high-density power converters”.

The conference will be held at the Hilton Hotel at the Munich Airport in Germany on December 5th, 2017 from 9am to 5pm. Organized by Bodo’s Power Systems and ICC Media / AspenCore Europe, the conference will focus on GaN and SiC, with the inaugural theme “Wide Band Gap is no Mystery”. To request a meeting at the conference, please contact info@navitassemi.com or call +1 ThinkGaNIC (+1 844-654-2642).

About Navitas
Navitas Semiconductor Inc
. is the world’s first and only GaN Power IC company, founded in 2013 and based in El Segundo, CA, USA. Navitas has a strong and growing team of power semiconductor industry experts with a combined 200 years of experience in materials, devices, applications, systems and marketing, plus a proven record of innovation with over 200 patents among its founders. The proprietary AllGaN™ process design kit monolithically integrates the highest performance GaN FETs with logic and analog circuits. Navitas GaN Power ICs enable smaller, higher energy efficient and lower cost power for mobile, consumer, enterprise and new energy markets. Over 30 Navitas patents are granted or pending.
Navitas Semiconductor, Navitas logo, and AllGaN are trademarks or registered trademarks of Navitas Semiconductor, Inc. All other brands, product names and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.

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Stephen Oliver
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