Now that we've released the first member of our GaN discrete amplifier family for defense, commercial and space applications, we're welcoming Foundry customers who have their own circuit designs ready for September 2008 starts
HILLSBORO, Ore. & ATLANTA (PRWEB) June 18, 2008
Gallium nitride represents the newest generation of amplifier technology with significantly greater power density than other processes. It offers considerable power savings and smaller device form factors for space-conscious design applications and helps improve electricity consumption, size and weight problems for a range of communications applications. The benefits lead to better performance and lower overall system costs for the customer, and can shrink carbon footprints for network system operators focused on reducing global warming.
TriQuint's first high frequency GaN device family is being introduced at the IEEE IMS MTT-S microwave symposium in Atlanta, Georgia, June 15-20. These discrete die-level devices boast up to 2.5-times the power density of high voltage gallium arsenide devices. The new GaN devices operate up to 18 GHz, have 55% power added efficiency (PAE), and can produce up to 90 Watts of output power.
GaN power technology has garnered significant defense and commercial interest because of its ability to operate with substantially greater power density (more wattage per square millimeter) and efficiency compared to other commonly used solid-state amplifier technologies. These factors enable the development of more efficient, smaller amplifiers capable of operating at higher system voltages, which lower overall system current demand and reduce the cost of power conversion.
"TriQuint's work on the DARPA (Defense Advanced Research Projects Agency) contract for high power, high frequency amplifiers has progressed well. The new products we are announcing today represent our first commercial release and we're excited about the opportunities this presents for customers," remarked Dr. Gailon Brehm, Director, TriQuint Defense Product Marketing. "GaN is one of several high power processes we offer customers, and its unique advantages – greater power density, high efficiency and rugged dependability, will appeal to designers working with high frequency, high power applications."
In March, TriQuint announced the largest gallium nitride epitaxial wafer order in the history of IQE Plc. That order, with deliveries scheduled throughout 2008, will support ongoing development efforts and the roll-out of new commercial and defense products by TriQuint.
"Strategy Analytics sees future radar, communications, EW [electronic warfare] and smart munitions platforms in the defense sector driving early demand for GaN. There are also a myriad of commercial opportunities within wireless infrastructure and satellite communications as well as those in broadcasting and medical markets. Inherent GaN properties including high power at high frequency, coupled with high voltage and wide bandwidth performance, make gallium nitride a technology that will see broad applications as it evolves in the marketplace. GaN's further advantages including reduced form factors and weight savings translate into system efficiencies that positively impact both capital and operating expenditures," said Asif Anwar, Director, GaAs and Semiconductor Technologies, Strategy Analytics.
"Strategy Analytics recognizes there are alternative amplifier process technologies in the market competing with GaN … while this has limited early opportunities for large scale gallium nitride standard product portfolio development, a foundry service is well positioned to serve these early prospects. In this regard, TriQuint's experience in all of these markets as well as the leading place the company holds as a foundry supplier puts TriQuint in a strong position," he added.
TriQuint announced June 18th that it is opening gallium nitride Foundry services beginning in September, 2008. Dr. Brehm remarked that TriQuint's GaN Foundry services will initially target power amplifier applications through the Ku frequency band.
"Now that we've released the first member of our GaN discrete amplifier family for defense, commercial and space applications, we're welcoming Foundry customers who have their own circuit designs ready for September 2008 starts," Dr. Brehm said. "We want to meet with customers, identify their needs and develop a successful implementation production schedule."
Visit TriQuint's IMS MTT-S booth (#1027) June 17-19 in the Georgia World Congress Center. Data sheets for the first members of the TGF2023-xx family of GaN power transistors will soon be posted on http://www.triquint.com; check the website for details or contact TriQuint: GaN Foundry e-mail: firstname.lastname@example.org; GaN discrete devices e-mail: email@example.com. For detailed information about TriQuint's wide range of products for networks, mobile handset, defense and space applications, visit http://www.triquint.com. Register for new product details and our newsletter at http://www.triquint.com/rf.
FORWARD LOOKING STATEMENTS
This TriQuint Semiconductor, Inc. (Nasdaq: TQNT) press release contains forward-looking statements made pursuant to the Safe Harbor provisions of the Private Securities Litigation Reform Act of 1995. Readers are cautioned that forward-looking statements involve risks and uncertainties. The cautionary statements made in this press release should be read as being applicable to all related statements wherever they appear. Statements containing such words as 'leading', 'exceptional', 'high efficiency', 'adding value', 'leading supplier', or similar terms are considered to contain uncertainty and are forward-looking statements. A number of factors affect TriQuint's operating results and could cause its actual future results to differ materially from any results indicated in this press release or in any other forward-looking statements made by, or on behalf of, TriQuint including, but not limited to: those associated with the unpredictability and volatility of customer acceptance of and demand for our products and technologies, the ability of our production facilities and those of our vendors to meet demand, the ability of our production facilities and those of our vendors to produce products with yields sufficient to maintain profitability, as well as the other "Risk Factors" set forth in TriQuint's most recent 10-Q report filed with the Securities and Exchange Commission. This and other reports can be found on the SEC web site, http://www.sec.gov. A reader of this release should understand that these and other risks could cause actual results to differ materially from expectations expressed / implied in forward-looking statements.
FACTS ABOUT TRIQUINT
Founded in 1985, we "Connect the Digital World to the Global Network"™ by supplying high-performance RF modules, components and foundry services to the world's leading communications companies. Specifically, TriQuint supplies products to four out of the top five cellular handset manufacturers, and is a leading gallium arsenide (GaAs) supplier to major defense and space contractors. TriQuint creates standard and custom products using advanced processes that include gallium arsenide, surface acoustic wave (SAW) and bulk acoustic wave (BAW) technologies to serve diverse markets including wireless handsets, base stations, broadband communications and military. TriQuint is also lead researcher in a 3-year DARPA program to develop advanced gallium nitride (GaN) amplifiers. TriQuint, as named by Strategy Analytics in August 2007, is the number-three worldwide leader in GaAs devices and the world's largest commercial GaAs foundry. TriQuint has ISO9001 certified manufacturing facilities in Oregon, Texas, and Florida and a production plant in Costa Rica; design centers are located in North America and Germany. Visit TriQuint at http://www.triquint.com/rf to register for our newsletters.