San Jose, CA (PRWEB) July 10, 2011
BeRex high performance BCP-series of GaAs PHEMT (pseudomorphic high electron mobility transistor) FET chips featuring a nominal gate length of .25µm, are now available in gate widths of 200, 300, 600, 800, 1200, 1600 or 2400µm. These chips are available in bare-die form and provide low noise, high gain, and excellent PAE (power added efficiency) making them ideal for low noise amplifiers, satellite communications, high reliability and other demanding applications. They are especially well suited for either wideband (6-18 GHz) or narrowband applications. The BCP-series chips are produced using state of the art metallization and SI3N4 passivation to assure the highest reliability.
“BeRex, Inc. is committed to being a dominate player in providing high performance PHEMT devices. Our company’s Silicon Valley location has allowed us to assemble a “dream team” of highly experienced PHEMT designers, quality and applications engineers, all of whom are focused on providing our clients with the highest quality parts, consistently and reliably”, commented Dr. Alex Yoo, Vice President of Research and Development.
BeRex, Inc.’s PHEMT chips are designed and manufactured in the U. S.
The BeRex BCP-series chips are competitively priced and are now in production. Additional information about these and other BeRex products is available on the company website: http://www.berex.com.
BeRex, Inc., headquarter in San Jose, CA, is a wholly owned subsidiary of BeRex Corporation of Seoul Korea. BeRex, Inc. designs, manufactures, and markets a broad range of RF GaAs MIMIC and discrete transistor products for U. S. and Canadian clients.