Silicon has had its day and the future is in GaN and other wide bandgap materials.
El Segundo,CA (PRWEB) April 26, 2016
Navitas Semiconductor today announced that CTO Dan Kinzer will open this year’s Power, Control & Intelligent Motion (PCIM) conference with a keynote speech titled “Welcome to the Post-Silicon World: Wide Band Gap Powers Ahead”.
The annual conference, located in Nuremburg, Germany, begins on May 10th and is a leading exhibition and conference for power electronics, intelligent motion, renewable energy and energy management.
“Opening the conference is a great honor, as PCIM is a well-respected, high-intensity, industry forum for new, disruptive technology,” said Kinzer, “and the topic is a perfect fit - silicon has had its day and the future is in GaN and other wide bandgap materials.”
The paper will highlight the fundamental semiconductor transitions underway in applications such as electric vehicles, renewable energy, power supplies, and battery chargers. The breakthrough performance of qualified products and subsequent benefits of size and cost can now be fully appreciated by power system designers.
Navitas Semiconductor Inc. is the world’s first and only GaN Power IC company, founded in El Segundo, CA, USA in 2013. Navitas has a strong and growing team of power semiconductor industry experts with a combined 200 years of experience in materials, circuits, applications, systems and marketing, plus a proven record of innovation with over 125 patents among its founders. The proprietary AllGaN™ process design kit monolithically-integrates the highest performance 650V GaN FET and GaN driver capabilities. Navitas GaN Power ICs enable smaller, higher energy efficient and lower cost power for mobile, consumer, enterprise and new energy markets. Over 25 Navitas proprietary patents are granted or pending.
For further information, please contact:
Stephen Oliver, VP Sales & Marketing
Stephen(dot)oliver(at)navitassemi(dot)com, +1 ThinkGaNIC (+1 844 654 2642)