Navitas Semiconductor CEO Keynote Presenter at Prestigious IEEE Event

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Navitas CEO presents Navitas AllGaN™ Power IC key advantages of high-frequency, high-density and energy savings at the 4th IEEE workshop on Wide Bandgap Power Devices and Applications (WiPDA 2016).

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Navitas CEO presents Navitas AllGaN™ Power IC key advantages of high-frequency, high-density and energy savings at the 4th IEEE workshop on Wide Bandgap Power Devices and Applications (WiPDA 2016).

Navitas Semiconductor today announced CEO Gene Sheridan will present the advantages of the world’s first Gallium Nitride (GaN) Power ICs, using its proprietary AllGaN™ technology, at the upcoming IEEE Power Electronics Society 4th IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA).

The conference is being held from November 7–9, 2016, at The Chancellor Hotel, Fayetteville, Arkansas, USA. Navitas will present a keynote entitled ‘Speed Drives Performance’ at 9AM Wednesday, November 9, 2016. A Navitas technical paper “650V AllGaN™ Power IC for Power Supply Applications” (1068) will be presented later the same day by the company’s Vice-President of IC Design, Marco Giandalia.

WiPDA provides a forum for device scientists, circuit designers, and application engineers from the Power Electronics and Electron Devices Societies to share technology updates, research findings, development experience and potential applications.

“Power systems can achieve a dramatic improvement in charging speed, power densities and cost reduction if high switching speeds can be combined with high energy efficiencies.” commented Navitas CEO, Gene Sheridan. “Navitas is leading a high-speed revolution in power electronics with the invention of the industry’s first GaN power ICs which enable up a 100x increase in switching speeds and a 3x increase in energy savings,” Sheridan added. “The customer response has been extraordinary and we’re excited to share this technology at this prestigious IEEE event.”

Navitas AllGaN™ 650V platform monolithically integrates GaN power FETs with GaN logic and drive circuits and enables 10x-100x higher switching frequency than existing silicon circuits, making power electronics smaller, lighter and lower cost. A new generation of high frequency, energy efficient converters is being enabled for smartphone and laptop chargers, OLED TVs, LED lighting, solar inverters, wireless charging devices and data centers.

"I'm very honored and excited to have Gene Sheridan and the experts from Navitas Semi to present at this year’s WiPDA and illustrate the advantages of GaN in delivering greater speed and performance for high-frequency, high-efficiency and high-density designs,” said Prof. Alan Mantooth General Chair WiPDA 2016. “The IEEE has a long history of identifying and nurturing new generations of technology. GaN is clearly demonstrating efficiency and performance advantages over traditional power semiconductors,” Prof. Mantooth concluded.

About Navitas:
Navitas Semiconductor Inc. is the world’s first and only GaN Power IC company, founded in El Segundo, CA, USA in 2013. Navitas has a strong and growing team of power semiconductor industry experts with a combined 200 years of experience in materials, devices, applications, systems and marketing, plus a proven record of innovation with over 125 patents among its founders. The proprietary AllGaN™ process design kit monolithically-integrates the highest performance 650V GaN FET and GaN driver capabilities. Navitas GaN Power ICs enable smaller, higher energy efficient and lower cost power for mobile, consumer, enterprise and new energy markets. Over 35 Navitas proprietary patents are granted or pending.


Navitas Semiconductor and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor, Inc. All other brands, product names and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.

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