Navitas CTO Presents Leading GaN Power IC Innovations at Prestigious Power Electronics Event in Japan

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Industry-First GaN Power ICs Technology Focused at ISPSD 2017.

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Dan Kinzer, Navitas Co-Founder & Chief Technology Officer/Chief Operating Officer

I am extremely pleased and honored to address my long-time friends and colleagues in the ISPSD community about the exciting breakthroughs in GaN Power ICs and the promise they bring to revolutionize a broad range of power electronic applications.

Navitas Semiconductor today announced that Dan Kinzer, Co-Founder & Chief Technology Officer/Chief Operating Officer, will deliver a plenary address entitled “Developments in GaN Power ICs” at the 29th International Symposium on Power Semiconductor Devices and ICs (ISPSD) The plenary opening session will be held at the Royton Sapporo Hotel in Sapporo, Japan on Monday morning, May 29, 2017.

Abstract: Gallium Nitride is an emerging technology that is enabling major advances in power electronics. Power integrated circuits are now emerging in the market and showing unprecedented efficiency, density, and system cost advantages. This paper reviews the beginnings of power integrated circuit techniques, leading to present implementations in advanced IC products, and forecasts future directions for the new technology.

ISPSD is the premier forum for technical discussion in all areas of power semiconductor devices and integrated circuits, their hybrid technologies, and applications.

“I am extremely pleased and honored to address my long-time friends and colleagues in the ISPSD community about the exciting breakthroughs in GaN Power ICs and the promise they bring to revolutionize a broad range of power electronic applications,” said Navitas CTO/COO, Dan Kinzer. “We are also delighted by the response of the power electronics industry to our GaN power IC’s innovations.”

Navitas established its position as the premier GaN innovator with the introduction of the first commercial GaN power ICs, which established new industry benchmarks for their combination of frequency, integration and density.

“ISPSD Japan 2017 is a key opportunity for Navitas to present advances in GaN power ICs and how they are enabling new benchmarks in speed, efficiency and power density at an affordable cost.” commented Navitas VP of Sales and Marketing, Stephen Oliver. “Since launching our single and half-bridge GaN Power ICs the high customer demand is validating the huge advantages of the Navitas portfolio,” Oliver added.

About Navitas:
Navitas Semiconductor Inc. is the world’s first and only GaN Power IC company, founded in 2013 and based in El Segundo, CA, USA. Navitas has a strong and growing team of power semiconductor industry experts with a combined 200 years of experience in materials, devices, applications, systems and marketing, plus a proven record of innovation with over 200 patents among its founders. The proprietary AllGaN™ process design kit monolithically integrates the highest performance GaN FETs with logic and analog circuits. Navitas GaN Power ICs enable smaller, higher energy efficient and lower cost power for mobile, consumer, enterprise and new energy markets. Over 30 Navitas patents are granted or pending.

About ISPSD JAPAN 2017
International Symposium on Power Semiconductor Devices and ICs (ISPSD) is the premier forum for technical discussion in all areas of power semiconductor devices and integrated circuits, their hybrid technologies, and applications. The 29th annual event takes place at Sapporo, Japan May 28–June 1, 2017. ISPSD 2017 is organized by the Institute of Electrical Engineers of Japan (IEEJ) and technically co-sponsored by IEEE Electron Devices Society, IEEE Power Electronics Society and NPERC-J. This conference is supported by JSPS KAKENHI Grant Number 16HP0704.

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Navitas Semiconductor and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor, Inc. All other brands, product names and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.

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