(PRWEB) November 08, 2014
The new report “Gallium Nitride Semiconductor Devices Market Global Forecast & Analysis 2012 – 2022” defines and segments the global GaN Semiconductors market (including both, power semiconductors and opt semiconductors) with analysis and forecasting of the revenues and volumes for the overall market and all its sub-segments.
The scope of this report includes only the market for semiconductor devices manufactured using Gallium Nitrite, as their epitaxy or substrate material. Thus, it only comprises the market for core discrete devices (diodes & transistors) and ICs. The market statistics of more complex and typically used electronic devices such as modules, packages, electronic equipment, and the other similar devices are not included in any way in the market statistics mentioned in this report. The complete market viewed and analyzed in this report is only for GaN semiconductor devices in all the aspects and chapters.
Browse more than 200 market data tables & figures spread through 466 pages and in-depth TOC on “Gallium Nitride (GaN) Semiconductor Devices (Discretes & ICs) Market”
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Gallium Nitride market statistics with regards to revenue and volume mentioned throughout this report do not cover the aspects related to gallium raw material, wafers, dies or any other intermediate stage of the several industry processes in the supply chain. An illustrative diagram of the GaN semiconductors monetary chain, showing the clear view of the market considered and analyzed in this report for quantitative data and statistics is given in the report.
The penetration of GaN was the first in opto-semiconductors in 2001, followed by power semiconductors (merging both, pure-power & RF-power semiconductors) in 2007. Commercialization of GaN power semiconductors (discretes & ICs) started at a medium scale in 2008. While the penetration growth rate is healthy and substantial in opto-semiconductors, the penetration rate in power semiconductors is explosive. One of the prime reasons for this is the growing application areas in the medium-voltage (200 to 1 KV) ranges, where GaN offers unique and unbeatable power efficiency over pure silicon. Another reason is the superior capability offered by GaN to handle high switching frequencies (>1 GHz), particularly for RF-power functions such as power amplification & switching in RF devices.
In power semiconductors, several transistors and diodes (& rectifiers) have been in the market since 2008, with extraordinary growth in the volume of power discretes (HEMTs, Diodes & Rectifiers and FETs) boosting the total revenue of the SiC power semiconductors market. Another factor for revenue growth was from GaN power ICs, where new power ICs such as MMICs and RFICs were launched commercially every year by industry players after extensive R&D efforts on developing new technologies to enable the same. The complete GaN power semiconductors industry has shifted to a mass-production scenario in 2011 with the success and revenue potential drawing the focus of several power semiconductor market giants.
GaN has turned out to be the choice for most of the power semiconductor applications and is quickly replacing the existing silicon technology. The various properties of GaN such as wider band gap, high break-down voltage, larger critical electric field, and higher thermal conductivity let the GaN devices operate at higher voltages, high switching frequencies, handle higher power density, and offer enhanced power efficiency than the pure Si devices. These properties allow the GaN discretes like Schottky diodes, MOSFETs, and the other advanced transistors to operate at much higher voltage levels, which are difficult for the counterpart Si devices. GaN power semiconductors also help in reducing the conduction and switching losses, thereby offering higher efficiency in electronic systems. The major application segments of GaN power semiconductors currently are the inverters (& converters), RF devices, power supply modules and motor drives being used across all the end user verticals.
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