High Electron Mobility Transistor (HEMT): A Trend Report
San Jose, California (PRWEB) June 16, 2014
Follow us on LinkedIn - High Electron Mobility Transistor (HEMT) is a field effect transistor that includes a junction between 2 materials featuring disparate band gaps. HEMT is also referred to as HFET (HeterostructureField Effect Transistor) or HJFET (Heterojunction Field Effect Transistor) and pertain to a group of devices that are based on 2-D electron gas. HEMTs find preferred use in RF applications which require low noise and very high frequency performance. Promising applications for HEMT with the potential for growth include mobile radio communications and satellite broadcasting within the millimeter-wave and microwave communications fields.
The trend report titled “High Electron Mobility Transistor (HEMT)” announced by Global Industry Analysts, Inc., is a focused research paper which provides cursory insights into the market, technology, R&D and corporate initiatives of companies worldwide. Companies covered in the report include Avago Technologies Ltd., Cree Inc., Microsemi Corporation, Mitsubishi Electric Corporation, Nitronex LLC, Raytheon Company, Silvaco Inc., Toshiba Corporation, Transphorm Inc., and WIN Semiconductors Corporation among others.
For more details about this trend report, please visit http://www.strategyr.com/TrendReport.asp?code=146098.
About Global Industry Analysts, Inc.
Global Industry Analysts, Inc., (GIA) is a leading publisher of off-the-shelf market research. Founded in 1987, the company currently employs over 800 people worldwide. Annually, GIA publishes more than 1500+ full-scale research reports and analyzes 40,000+ market and technology trends while monitoring more than 126,000 Companies worldwide. Serving over 9500 clients in 27 countries, GIA is recognized today, as one of the world's largest and reputed market research firms.
Global Industry Analysts, Inc.
Web Site: http://www.StrategyR.com/