Metal Gate Transistors: A Trend Report
San Jose, California (PRWEB) July 14, 2014
Follow us on LinkedIn – A gate is the most fundamental unit of a transistor, and represents an area where on/off switching is executed. Transistors incorporating advanced metals as gate materials are termed as metal gate transistors that enable more reliable and faster performance. The use of high dielectric constant metals for transistors with small form factors enables design engineers to minimize current leakage and enhance switching speed. The primary materials in metal gate transistors for NMOS (N-Type Metal Oxide Semiconductor) are Ta, TaN and Nb, while for PMOS (P-Type Metal Oxide Semiconductor) is WN/RuO2.
The trend report titled “Metal Gate Transistors” announced by Global Industry Analysts Inc., is a focused research paper which provides cursory insights into the market and technology. The report also offers coverage on key companies such as Advanced Micro Devices, AMO GmbH, Apple, Applied Materials, Coventor, Global Foundries, Intel, IBM, Panasonic, Samsung Foundry, Semiconductor Manufacturing International Corporation, Taiwan Semiconductor Manufacturing Co. Ltd., United Microelectronics Corporation, and Xilinx Inc.
For more details about this trend report, please visit http://www.strategyr.com/TrendReport.asp?code=146471.
About Global Industry Analysts, Inc.
Global Industry Analysts, Inc., (GIA) is a leading publisher of off-the-shelf market research. Founded in 1987, the company currently employs over 800 people worldwide. Annually, GIA publishes 1500+ full-scale research reports and analyzes 40,000+ market and technology trends while monitoring more than 126,000 Companies worldwide. Serving over 9500 clients in 27 countries, GIA is recognized today, as one of the world's largest and reputed market research firms.
Global Industry Analysts, Inc.
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