Millimeter Wave Technology and GaN RF Device Market to Grow at High CAGR - New Report by MicroMarket Monitor
(PRWEB) May 28, 2014 -- The revenue for the global millimeter wave technology market is estimated to reach $208.12 million by the end of 2014, and is expected to grow to cross $1.9 billion in 2020 at a CAGR of 45.09%. This growth can be attributed to the growing telecom application market for MM wave technology, especially in the small cell backhaul field. Browse tables, figures, and charts combined with an in-depth analysis of various market dynamics such as drivers, restraints, and opportunities. This report not only analyses short-term impact parameters, but also long-term macro-economic parameters. Along with this, the report also gives an insight into various market parameters, such as market share analysis, and recent market activity of leading players for sustainability.
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Millimeter waves are the highest band of radio waves and operate at a frequency range of 20-300 GHz. The radio waves in this band have wavelengths that are in the order of millimeters (mm), which is why the waves in this band are called millimeter waves, abbreviated as MM waves. In wireless communication, frequency is one of the major factors that can help ascertain the feasibility of the technology.
The MM wave scanner market is also expected to grow rapidly in the coming five years. This technology has wide application in areas like the mobile & telecommunication sector, consumer & commercial sector, healthcare sector, industrial sector, automotive & transportation sector, military, defense & aerospace sector, and some emerging next-generation applications. By geography, North America is currently the highest-grossing market for this technology, while Europe and APAC are the fastest-growing regions.
GaN RF Device Market
GaN has turned out to be the choice for most of the power semiconductor applications, and is quickly replacing the existing silicon technology for the market. The various properties of GaN, such as wider bandgap, high break-down voltage, larger critical electric field, and higher thermal conductivity allow GaN devices operate at higher voltages, high switching frequencies, handle higher power density, and offer enhanced power efficiency as compared to pure Si devices. These properties allow Schottky diodes, MOSFETs, and the other advanced transistors to operate at much higher voltage levels, which are difficult for their counterpart Si devices. GaN power semiconductors also help in reducing the conduction and switching losses, thereby offering higher efficiency in electronic systems. The major application segments of GaN power semiconductors currently are inverters (& converters), RF devices, power supply modules, and motor drives, being used across all the end-user verticals.
Browse through the market data tables, figures and detailed ToC on the “GaN RF Device Market”.
http://www.micromarketmonitor.com/market-report/gan-rf-device-reports-7906462220.html
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