Key players in development of silicon carbide based semiconductor market are CREE Incorporated (U.S.), Fairchild Semiconductor International Inc. (U.S.), Genesic Semiconductor Inc. (U.S.), Infineon Technologies AG (Germany), Microsemi Corporation (U.S.).
(PRWEB) June 26, 2014
According to a new market research report "Silicon carbide (SiC) in semiconductor market by technology, product, and application (Automotive, Defense, Computers, Consumer Electronics, ICT, Industrial, Medical, Railways, and Solar), by geography - forecast and analysis to 2013 - 2020", the Silicon Carbide (SiC) in Semiconductor Market expected to reach $3182.89 Million by 2020; growing at a CAGR of 42.03% from 2014 to 2020.
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Semiconductor devices based on silicon carbide such as high power semiconductor devices and high temperature semiconductor devices are very useful when it comes to the devices being used in harsh conditions. The silicon based semiconductor device is slowly exiting the semiconductor market and is aggressively being replaced with more a powerful material called Silicon Carbide. Growth of Silicon Carbide based semiconductor device is mainly due to the fact that it has found its application in high voltage power electronics market; generally high voltage is above one kilo volt (> 1 KV). Thus, sectors such as industrial and power account a major share of revenue from silicon carbide based semiconductor devices. Automotive and transportation sectors are also expected to have huge potential application for the silicon carbide market. These sectors include electric vehicle, railways, and airways.
The overall silicon carbide based semiconductor market is segmented into four major segments - technology, products, applications, and geography. All the segments are separately classified in the report. The silicon carbide based semiconductor market is expected to grow by 2020, at an estimated CAGR of 42.03% from 2014 to 2020.
Geographically, the silicon carbide based semiconductor market is segmented into North America (the U.S. and others), Europe, APAC (China, India, and others) and Rest of the World (Latin America, Middle East and others); geographic segment accounts Japan separately. The APAC market accounts for the highest market size and is followed by North America and Europe respectively. Japan, which is considered to the birth place of silicon carbide, accounted for approximately 13.83% of the total silicon carbide based semiconductor market in terms of value in 2013.
The players involved in the development of silicon carbide based semiconductor market includes CREE Incorporated (U.S.), Fairchild Semiconductor International Inc. (U.S.), Genesic Semiconductor Inc. (U.S.), Infineon Technologies AG (Germany), Microsemi Corporation (U.S.), Norstel AB (U.S.), Renesas Electronics Corporation (Japan), ROHM Co. Ltd. (Japan), STMicroelectronics N.V (Switzerland), and Toshiba Corporation (Japan).
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