DUBLIN, Dec. 9, 2020 /PRNewswire-PRWeb/ -- Navitas Semiconductor today announced that Dell Technologies has adopted new gallium nitride (GaN) technology for the first time, using Navitas GaNFast power ICs.
The Dell USB-C Enhanced Power Adapter PA901 is a dual-output fast charger with 90W available via USB-C cable for high-power laptop charging, and an extra 10W via USB-A to simultaneously charge a smartphone. The adapter unleashes Dell ExpressCharge™ for a quick boost of up to 35% in just 15 minutes and will charge the Dell Latitude up to 80% in under an hour.
GaN is a next-generation power semiconductor technology that runs up to 100x faster than old, slow silicon chips, with dramatic improvements in energy savings and power density. Navitas' GaNFast power ICs integrate GaN power (FET) with drive, control, and protection to enable up to 3x more power in half the size and weight. Over 9,000,000 GaNFast power ICs have been shipped with zero failures.
"Dell customers expect innovation, performance and quality, and GaNFast technology from Navitas meets those expectations by delivering the small size, low weight and cool operation that are critical for mobile fast charging," said Gene Sheridan, CEO and co-founder of Navitas. "Dell's adoption of fast-charging GaN is another blow to the old, slow, silicon chip. Navitas' design, applications and quality teams passed a series of rigorous technology, performance and reliability reviews with Dell to ensure a safe and successful adapter launch."
Two NV6117 GaNFast power ICs are used in the Dell adapter; one for the critical conduction mode (CrCM) boost power factor correction circuit (PFC), and one for the DC-DC quasi-resonant (QR) flyback. The adapter was designed and built for Dell by Chicony Power Technology, headquartered in Taipei with support from local Navitas application engineering.
Visit navitassemi.com for more about the Dell PA901 adapter technology, and GaNFast.com for reviews and to purchase the 90W charger.
About Navitas:
Navitas Semiconductor Limited. is the world's first and only GaN Power IC company, founded in 2014. Navitas has a strong and growing team of power semiconductor industry experts with a combined 300 years of experience in materials, devices, applications, systems and marketing, plus a proven record of innovation with over 300 patents among its founders. GaN power ICs integrate GaN power (FET) with drive, control and protection to enable faster charging, higher power density and greater energy savings for mobile, consumer, enterprise, eMobility and new energy markets. Over 120 Navitas patents are issued or pending, and over 9 million GaNFast power ICs have been shipped with zero failures.
Navitas Semiconductor, GaNFast and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor, Inc. All other brands, product names and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.
Media Contact
Stephen Oliver, Navitas Semiconductor, +1 9782892364, [email protected]
SOURCE Navitas Semiconductor
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