Monolithic 3D Breakthrough at IEEE S3S 2014 Conference

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In the upcoming 2014 IEEE S3S conference (October 6-9), MonolithIC 3D will unveil a breakthrough flow that is game-changing for 3D IC technology.

MonolithIC 3D Inc. at the IEEE S3S 2014

Any fab could utilize this breakthrough to provide far better products with minimum capital and R&D investment

MonolithIC 3D Inc., the technology innovator of monolithic 3D, announced today that it will unveil a game changing process flow for monolithic 3D (M3DI) using existing fab and existing transistor processes at the IEEE S3S Conference 2014. On October 9th afternoon, at the Westin San Francisco Airport, Zvi Or-Bach, MonolithIC 3D’s CEO will present this game changing technology. Zvi Or-Bach has been honored to chair the 3D IC part of the S3S conference which this year will feature two papers on breakthrough precision bonders.

“It has become clearer that this breakthrough in wafer bonding technologies combined with our innovative process flow will provide a game changing impact on 3D IC and the semiconductor industry at large. Now that dimensional scaling has reached the diminishing returns phase, monolithic 3D could take over as the path for future IC product enhancements. With this breakthrough the barrier for 3D integration would be removed, thus opening the enhancement path to any and all semiconductors vendors”, said Mr. Or-Bach.

The IEEE S3S is the technical venue to be updated on SOI, Sub-threshold, and 3D IC technologies, including monolithic 3D, which is the newest technology to be integrated into the conference. The 3D part of S3S 2014 will have a full day of tutorial presentations by leading researchers in this space, and will conclude with a session dedicated to discussing the most recent breakthroughs in the field.

In the “3D New Developments” session, the game-changing technology will be presented.

“Leveraging breakthrough progress in wafer bonding technology, for the first time ever we will be presenting a monolithic 3D low cost flow using an existing fab transistor process. Any fab could utilize this breakthrough to provide far better products with minimum capital and R&D investment”, noted Zvi Or-Bach. This game-changing flow removes the historical differentiation between sequential and parallel 3D, and should significantly reduce the time for monolithic 3D adoption throughout the entire semiconductor industry.

In addition, the company will also chair a short course on Monolithic 3D along with Paul Franzon from North Carolina State University. The company’s contribution to the course is titled: “Technological Approaches to CMOS Integration”. In the short course there will also be presented “Design for Monolithic 3D IC” by Sung Kyu Lim from Georgia Tech, “3D Flash” by Akihiro Nitayama from Tohoku University, “3D RRAM” by Deepak Sekar from Rambus, “Technological Approaches for 3D Integration of Silicon Layers with Other Crystal Layers” by Eugene Fitzgerald from MIT, and “Technological Approaches to Beyond Silicon Using Monolithic Integration” by H-S. Philip Wong of Stanford University.

Join us at the 2014 S3S Conference held at the Westin San Francisco Airport, Millbrae California on October 6th thru 9th, 2014. You can access the conference technical program here.

About MonolithIC 3D Inc.
MonolithIC 3D Inc. has more than 100 issued and pending patents on the technology, design and architecture of monolithic 3D-ICs. The company has pioneered single crystal silicon based monolithic 3D-ICs for logic, memory and optoelectronic applications. Its business model involves licensing technology to existing semiconductor manufacturers. Further information about MonolithIC 3D Inc., including detailed technical information, can be found at its website.

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Iulia Tomut
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