Navitas is the only production gallium nitride [GaN] company to be recognized by EE Times, recognizing our monolithic, highly-integrated approach is leading the industry for next-generation power electronics solutions
DUBLIN, Ireland (PRWEB) July 16, 2020
Navitas Semiconductor announced today its selection to the prestigious 2020 Electronic Engineering Times ‘Silicon 100’ start-up ranking. Navitas exceeded selection criteria including technology, intended market, financial position and investment profile, maturity and executive leadership. EE Times has published the Silicon listing since 2004, and the latest list includes companies across a broad range of semiconductor categories that include analog & mixed-signal, wide-band gap materials, machine learning, quantum computing and wireless, among others.
“Navitas is the only production gallium nitride [GaN] company to be recognized by EE Times, recognizing our monolithic, highly-integrated approach is leading the industry for next-generation power electronics solutions,” said Stephen Oliver, Navitas’ Vice-President Marketing and Investor Relations, adding “Customers clearly see the performance advantages GaN has over old, slow silicon, and see how they can upgrade their products to take advantage of the speed, density and efficiency GaNFast™ Power ICs deliver”.
Brian Santo, Editor in Chief of EE Times, explained “All of the companies in our Silicon 100 made the list because of their innovations in the electronics industry. Recently there have been some great strides in the use of semiconductors other than silicon. Navitas specializes in power ICs built with gallium nitride. The company earned inclusion in the Silicon 100 with its aggressive program to create patentable improvements in GaN and GaN circuitry, efforts that have caught the eye of OEMs who need power ICs for their products. We take pride in knowing technology and understanding the business. The Silicon 60, this year expanded to the Silicon 100, demonstrates the commitment of EE Times and its distinguished reporters to recognize the critical role that start-ups play in technological progress.”
Gallium nitride is a next-generation semiconductor technology that runs up to 20x faster than old, slow silicon (Si), and enables 3x more power, which translates to up to 3x faster charging in half the size & weight.
Navitas recently announced that their GaNFast™ Power IC’s are the leading choice in creating the world’s smallest, thinnest and lightest power adapters and fast-chargers having been selected in over 50 fast-charger products and platforms including Lenovo, Xiaomi and NVIDIA. A 100+ patent IP portfolio is the established technology foundation on which next-generation GaNFast chargers are built.
About Navitas:
Navitas Semiconductor Inc. is the world’s first and only GaN Power IC company, founded in 2014. Navitas has a strong and growing team of power semiconductor industry experts with a combined 200 years of experience in materials, devices, applications, systems and marketing, plus a proven record of innovation with over 300 patents among its founders. GaN power ICs monolithically-integrate GaN power, GaN analog and GaN logic circuits to enable faster charging, higher power density and greater energy savings for mobile, consumer, enterprise, eMobility and new energy markets. Over 100 Navitas patents are issued or pending.
About EE Times
Since 1973, Electronic Engineering Times has been delivering news and analysis geared for electrical engineers. Over the 50+ years since its founding, the electronics and publishing industries have gone through enormous changes, but EE Times remains committed to delivering content about technology, business and the profession that is accurate, insightful, useful and entertaining. EE Times offers design engineers and management executives news and analysis of the latest technologies and business developments in the global electronics industry. Award-winning journalists and subject matter experts strive to cover not just what happened today, but why it happened and how it transpired.
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